ROHM Semiconductor 2SCR523UBTL BJTs - バイポーラトランジスタ トランジスタ NPN GP 50V 0.1A

Technology: Si

Unit Weight: 32.618 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 560 at 1 mA, 6 V

Gain Bandwidth Product fT: 350 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 1 mA, 6 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV