ROHM Semiconductor 2SCR586D3TL1 BJTs - バイポーラトランジスタ NPN 80V 5A 10W パワートランジスタ 低VCE

Technology: Si

Unit Weight: 1.430 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 10 W

DC Current Gain hFE Max: 390 at 500 mA, 3 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120 at 500 mA, 3 V

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 300 mV