ROHM Semiconductor 2SD1733TLQ BJTs - バイポーラトランジスタ NPN 80V 1A

Width: 5.5 mm

Height: 2.3 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 420 mg

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 390

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 120

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 400 mV