ROHM Semiconductor 2SD2696T2L BJTs - バイポーラトランジスタ NPN 低VCE(sat)トランジスタ

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 150 mW

DC Current Gain hFE Max: 680 at 100 mA, 2 V

Gain Bandwidth Product fT: 400 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 400 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 270 at 100 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 300 mV