ROHM Semiconductor BSM400D12P3G002 SiCパワーモジュール 358A 1200V ハーフブリッジSiC

Width: 62 mm

Height: 20.8 mm

Length: 152 mm

Fall Time: 55 ns

Rise Time: 55 ns

Technology: SiC

Configuration: Dual

Mounting Style: Screw Mount

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.2 kV

Pd - Power Dissipation: 1.57 kW

Vgs - Gate-Source Voltage: - 4 V, + 22 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 240 ns

Id - Continuous Drain Current: 400 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 5.6 V