ROHM Semiconductor DTC123ECAT116 デジタルトランジスタ NPN 100mA 50V バイアス抵抗付き

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Output Voltage: 100 mV

Transistor Polarity: NPN

Pd - Power Dissipation: 350 mW

Typical Input Resistor: 2.2 kOhms

Typical Resistor Ratio: 1

Emitter- Base Voltage VEBO: 3 V

Maximum Operating Frequency: 250 MHz

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 20 at 20 mA, 5 V

Collector- Emitter Voltage VCEO Max: 300 mV