ROHM Semiconductor IMX5T108 BJTs - バイポーラトランジスタ デュアルNPN 11V 50mA

Width: 1.6 mm

Height: 1.1 mm

Length: 2.9 mm

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

DC Current Gain hFE Max: 120 at 5 mA, 10 V

Gain Bandwidth Product fT: 3.2 GHz

Emitter- Base Voltage VEBO: 3 V

Collector- Base Voltage VCBO: 20 V

Continuous Collector Current: 50 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 56 at 5 mA, 10 V

Collector- Emitter Voltage VCEO Max: 11 V

Collector-Emitter Saturation Voltage: 500 mV