ROHM Semiconductor QS5U36TR MOSFET 小信号 Nチャネル 20V 2.5A 負荷スイッチング

Width: 1.6 mm

Height: 0.85 mm

Length: 2.9 mm

Fall Time: 15 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 3.5 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 1.25 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 6 ns

Typical Turn-Off Delay Time: 30 ns

Id - Continuous Drain Current: 2.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 2.7 S

Vds - Drain-Source Breakdown Voltage: 20 V

Vgs th - Gate-Source Threshold Voltage: 1.3 V