ROHM Semiconductor QS5Y1TR BJTs - バイポーラトランジスタ アイソレーテッドDC/DCコンバータ

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 1.25 W

DC Current Gain hFE Max: 500 at 500 mA, 2 V

Gain Bandwidth Product fT: 270 MHz, 300 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: 3 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 200 at 500 mA, 2 V

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 400 mV