ROHM Semiconductor QS8J1TR MOSFET 小信号 Pチャネル-12V-4.5A 中電力スイッチング

Width: 2.4 mm

Length: 3 mm

Fall Time: 215 ns

Rise Time: 75 ns

Technology: Si

Unit Weight: 10 mg

Channel Mode: Enhancement

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: 2 P-Channel

Qg - Gate Charge: 31 nC

Number of Channels: 2 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 1.5 W

Vgs - Gate-Source Voltage: - 10 V, + 10 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 390 ns

Id - Continuous Drain Current: 4.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 29 mOhms

Vds - Drain-Source Breakdown Voltage: 12 V

Vgs th - Gate-Source Threshold Voltage: 1 V