ROHM Semiconductor R6006ANX MOSFETs 10V ドライブ Nチャネル MOSFET

Fall Time: 35 ns

Rise Time: 18 ns

Technology: Si

Unit Weight: 2 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 15 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 40 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 22 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 6 A

Maximum Operating Temperature: + 150 C

Forward Transconductance - Min: 1.7 S

Rds On - Drain-Source Resistance: 1.2 Ohms

Vds - Drain-Source Breakdown Voltage: 600 V

Vgs th - Gate-Source Threshold Voltage: 4.5 V