ROHM Semiconductor RGPZ10BM40FHTL IGBTトランジスタ 430V 20A 1.6V Vce イグニッションIGBT

Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 107 W

Gate-Emitter Leakage Current: 15 uA

Maximum Gate Emitter Voltage: 10 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 460 V

Collector-Emitter Saturation Voltage: 2.1 V

Continuous Collector Current at 25 C: 20 A