ROHM Semiconductor RGW50TS65DGC11 IGBTトランジスタ 650V 25A フィールドストップトレンチIGBT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 156 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.9 V

Continuous Collector Current at 25 C: 50 A