ROHM Semiconductor RSD080P05TL MOSFETトランジスタ 4Vドライブ PチャネルMOSFET CPTパッケージ

Fall Time: 20 ns

Rise Time: 15 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 9 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 15 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 12 ns

Typical Turn-Off Delay Time: 50 ns

Id - Continuous Drain Current: 8 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 6 S

Rds On - Drain-Source Resistance: 91 mOhms

Vds - Drain-Source Breakdown Voltage: 45 V

Vgs th - Gate-Source Threshold Voltage: 3 V