ROHM Semiconductor RV2E014AJT2CL MOSFET Nch 30V 1.4A、DFN1006-3、小信号MOSFET

Fall Time: 2.5 ns

Rise Time: 4.4 ns

Technology: Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 600 mW

Vgs - Gate-Source Voltage: - 12 V, + 12 V

Typical Turn-On Delay Time: 3.6 ns

Typical Turn-Off Delay Time: 7.8 ns

Id - Continuous Drain Current: 1.4 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 0.2 S

Rds On - Drain-Source Resistance: 290 mOhms

Vds - Drain-Source Breakdown Voltage: 30 V

Vgs th - Gate-Source Threshold Voltage: 1.5 V