ROHM Semiconductor SCS302AHGC9 ショットキーシリコンカーバイドダイオード 650V;2A;22W SiC SBD TO-220ACP

Technology: SiC

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 2.15 A

Ir - Reverse Current: 10.8 uA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 22 W

Ifsm - Forward Surge Current: 19 A

Maximum Operating Temperature: + 175 C

Vrrm - Repetitive Reverse Voltage: 650 V