ROHM Semiconductor UMT2907AT106 BJTs - バイポーラトランジスタ PNP 60V 0.6A

Width: 1.25 mm

Height: 0.8 mm

Length: 2 mm

Technology: Si

Unit Weight: 5 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 300 at - 150 mA, - 10 V

Gain Bandwidth Product fT: 200 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: - 600 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 50 at - 500 mA, - 10 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 1.6 V