ROHM Semiconductor VS110VLNVWMTFTR TVSダイオード トランスボルテージサプレッサ

Polarity: Unidirectional

Working Voltage: 110 V

Clamping Voltage: 177 V

Breakdown Voltage: 110 V

Termination Style: SMD/SMT

Number of Channels: 1 Channel

Pd - Power Dissipation: 1 W

Ipp - Peak Pulse Current: 1.1 A

Vesd - Voltage ESD Air Gap: 30 kV

Vesd - Voltage ESD Contact: 30 kV

Maximum Operating Temperature: + 150 C

Pppm - Peak Pulse Power Dissipation: 200 W