SemiQ GCMX080A120B2H1P フルブリッジSiC 1200V 80mΩ MOSFET フルブリッジモジュール

Fall Time: 4 ns

Rise Time: 3 ns

Technology: SiC

REACH - SVHC: Details

Mounting Style: Press Fit

Transistor Polarity: N-Channel

Pd - Power Dissipation: 119 W

Vgs - Gate-Source Voltage: - 5 V, + 20 V

Typical Turn-On Delay Time: 10 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 27 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Rds On - Drain-Source Resistance: 77 mOhms

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs th - Gate-Source Threshold Voltage: 1.8 V