Sharp Microelectronics GP1S196HCPSF 光スイッチ、透過型、フォトトランジスタ出力

Fall Time: 50 us

Rise Time: 50 us

Slot Width: 1.1 mm

Wavelength: 950 nm

Output Type: Phototransistor

Unit Weight: 109.190 mg

Aperture Width: 0.3 mm

Mounting Style: SMD/SMT

Sensing Method: Transmissive, Slotted

Sensing Distance: 1.1 mm

Moisture Sensitive: Yes

Number of Channels: 1 Channel

If - Forward Current: 20 mA

Pd - Power Dissipation: 100 mW

Maximum Collector Current: 20 mA

Maximum Operating Temperature: + 85 C

Minimum Operating Temperature: - 25 C

Collector- Emitter Voltage VCEO Max: 35 V