Vishay Siliconix SQJ260EP-T1_GE3 MOSFETデュアル60V Vds 非対称 AEC-Q101認定

Fall Time: 10 ns , 11 ns

Rise Time: 2 ns, 3 ns

Technology: Si

Unit Weight: 506.600 mg

Channel Mode: Enhancement

Configuration: Dual

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 2 N-Channel

Qg - Gate Charge: 12 nC, 25 nC

Number of Channels: 2 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 27 W, 48 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 10 ns , 14 ns

Typical Turn-Off Delay Time: 18 ns , 26 ns

Id - Continuous Drain Current: 20 A, 54 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 26 S, 49 S

Rds On - Drain-Source Resistance: 15.5 mOhms, 7 mOhms

Vds - Drain-Source Breakdown Voltage: 60 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V