SPIROX SP3055A Non-Destructive Inspection System for SiC Crystal Killer-Defects (2” 4” 6” 8”, 300 μm - 550 μm)

SiC Substrate/EPI Wafer Size: 2” 4” 6” 8”

Wafer Thickness: 300 μm - 550 μm

Chuck: XY Stage Repeatability : 0.1 μm

Inspection Items: Whole Wafer Defect Scan (MicroPipe, BPD, TED, TSD, SF, etc.)

Whole Wafer Defect Scan

Estimated Inspection Time: 1 hr @4”wafer; 2 hrs @6”wafer; 4 hrs @8”wafer

Lateral Resolution: 1 μm

Analysis: MicroPipe Density (MPD); BPD/TED/TSD Density; Stacking Fault Area Percentage; Wafer Yield; Tri-angle and Carrot**

MicroArea 3D Scan (optional)

Field of View: 400 μm x 400 μm

Scanning Zoom: Yes ( 1x - 10x )

Scan Resolution: Up to 1024 x 1024

Lateral resolution: 0.4μm

Axial Resolution: 0.25μm

Min. Increment of Z stage: 0.02μm

Wide Field Module Camera: Color Camera (FOV 400 μm x 400 μm)

Datasheet