STMicroelectronics 2N5154S1 BJTs - バイポーラトランジスタ 放射線耐性 80 V、5 A NPNトランジスタ - エンジニアリングモデル

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 35 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1.5 V