STMicroelectronics 2STF2550 BJTs - バイポーラトランジスタ LV高性能PNPパワートランジスタ

Technology: Si

Unit Weight: 130.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.4 W

Emitter- Base Voltage VEBO: 5 V

Continuous Collector Current: - 5 A

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 70

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 390 mV