STMicroelectronics BD139-10 BJTs - バイポーラトランジスタ NPN シリコントランジスタ

Width: 2.7 mm

Height: 10.8 mm

Length: 7.8 mm

Technology: Si

Unit Weight: 60 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.25 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 63

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV