STMicroelectronics BU508AF BJTs - バイポーラトランジスタ NPN パワートランジスタ

Width: 15.7 mm

Height: 14.7 mm

Length: 26.7 mm

Technology: Si

Unit Weight: 5.200 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 50 W

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 700 V

Collector-Emitter Saturation Voltage: 1 V