STMicroelectronics BUL128D-B BJTs - バイポーラトランジスタ 高電圧高速スイッチングNPNパワートランジスタ

Width: 4.6 mm

Height: 15.75 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 70 W

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V