STMicroelectronics BULD742CT4 BJTs - バイポーラトランジスタ HI VLTG FAST SWITCH NPN パワートランジスタ

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 350 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 45 W

Emitter- Base Voltage VEBO: 19 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 4 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 48 at 100 mA, 5 V, 25 at 800 mA, 3 V

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 600 mV