STMicroelectronics ST13003-K BJTs - バイポーラトランジスタ 高電圧 高速スイッチング NPN

Width: 2.7 mm

Height: 10.8 mm

Length: 7.8 mm

Technology: Si

Unit Weight: 600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 40 W

DC Current Gain hFE Max: 8

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1.5 V