STMicroelectronics ST13009 BJTs - バイポーラトランジスタ HV 高速スイッチング NPN パワートランジスタ

Width: 4.6 mm

Height: 9.15 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 100 W

Emitter- Base Voltage VEBO: 12 V

Maximum DC Collector Current: 12 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 2.5 V