STMicroelectronics STB13007DT4 BJTs - バイポーラトランジスタ NPN パワートランジスタ

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 80 W

Emitter- Base Voltage VEBO: 9 V

Continuous Collector Current: 8 A

Maximum DC Collector Current: 8 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 8

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 2 V