STMicroelectronics STD105N10F7AG MOSFETs 自動車用グレード Nチャネル 100 V、6.8 mΩ typ 80 A STripFET F7 パワーMOSFET

Fall Time: 15 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 330 mg

Channel Mode: Enhancement

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 61 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 120 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 27 ns

Typical Turn-Off Delay Time: 46 ns

Id - Continuous Drain Current: 80 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 6.8 mOhms

Vds - Drain-Source Breakdown Voltage: 100 V

Vgs th - Gate-Source Threshold Voltage: 2.5 V