STMicroelectronics STD888T4 BJTs - バイポーラトランジスタ 中電流、高性能、低電圧PNPトランジスタ

Width: 6.2 mm

Height: 2.4 mm

Length: 6.6 mm

Technology: Si

Unit Weight: 4 g

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 15 W

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 45 V

Maximum DC Collector Current: 5 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 150

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 700 mV