STMicroelectronics STGB10NB37LZT4 IGBTトランジスタ 10 A - 410 V 内部クランプIGBT

Width: 9.35 mm

Height: 4.6 mm

Length: 10.4 mm

Technology: Si

Unit Weight: 2.240 g

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Pd - Power Dissipation: 125 W

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 440 V

Continuous Collector Current Ic Max: 20 A

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 20 A