STMicroelectronics STGB20N45LZAG IGBTトランジスタ 自動車グレード 450 V 内部クランプIGBT ESCIS 300 mJ

Technology: Si

Unit Weight: 1.380 g

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Pd - Power Dissipation: 150 W

Gate-Emitter Leakage Current: 625 uA

Maximum Gate Emitter Voltage: - 12 V, 16 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 475 V

Continuous Collector Current Ic Max: 25 A

Collector-Emitter Saturation Voltage: 1.25 V

Continuous Collector Current at 25 C: 25 A