STMicroelectronics STGB3NC120HDT4 IGBTトランジスタ IGBT 1200V 7A PowerMESH ウルトラファスト

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 75 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.3 V

Continuous Collector Current at 25 C: 14 A