STMicroelectronics STGD10HF60KD IGBTトランジスタ 自動車グレード 10A、600V 短絡耐性IGBT 超高速ダイオード

Technology: Si

Unit Weight: 350 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Pd - Power Dissipation: 62.5 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 10 A

Collector-Emitter Saturation Voltage: 2.75 V

Continuous Collector Current at 25 C: 18 A