STMicroelectronics STGD4M65DF2 IGBTトランジスタ トレンチゲートフィールドストップIGBT、Mシリーズ 650V、4A 低損失

Technology: Si

Unit Weight: 330 mg

Configuration: Single

Mounting Style: SMD/SMT

Pd - Power Dissipation: 68 W

Gate-Emitter Leakage Current: +/- 250 uA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 8 A

Collector-Emitter Saturation Voltage: 1.6 V

Continuous Collector Current at 25 C: 8 A