STMicroelectronics STGIPQ3H60T-HZ SiC IGBTモジュール SLLIMM nano 第2シリーズ IPM、3 A、600 V、3相IGBTインバータブリッジ

Technology: SiC

Unit Weight: 4 mg

Configuration: Half Bridge

Mounting Style: Through Hole

Maximum Operating Temperature: + 175 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.15 V

Continuous Collector Current at 25 C: 3 A