STMicroelectronics STGP30H60DF IGBTトランジスタ 600V 30A 高速トレンチゲートIGBT

Technology: Si

Unit Weight: 2.300 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 260 W

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.4 V

Continuous Collector Current at 25 C: 60 A