STMicroelectronics STGP30M65DF2 IGBTトランジスタ トレンチゲートフィールドストップIGBT Mシリーズ、650V 30A 低損失

Technology: Si

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 258 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 60 A