STMicroelectronics STGP3HF60HD IGBTトランジスタ 4.5 A、600 V 超高速IGBT 超高速ダイオード

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 38 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 2.45 V

Continuous Collector Current at 25 C: 7.5 A