STMicroelectronics STGW50H65DFB2-4 IGBTトランジスタ トレンチゲートフィールドストップ, 650 V, 50 A, 高速 HB2シリーズ IGBT

Technology: Si

Unit Weight: 4.430 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 272 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 86 A