STMicroelectronics STGWA60H65DFB IGBTトランジスタ トレンチゲートフィールドストップIGBT、HBシリーズ 650V、60A 高速

Width: 15.75 mm

Height: 5.15 mm

Length: 20.15 mm

Technology: Si

Unit Weight: 38 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 375 W

Operating Temperature Range: - 55 C to + 175 C

Continuous Collector Current: 80 A

Gate-Emitter Leakage Current: 250 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 80 A

Collector-Emitter Saturation Voltage: 2 V

Continuous Collector Current at 25 C: 80 A