STMicroelectronics STN0214 BJTs - バイポーラトランジスタ 超高電圧 NPN 1400V 200mA パワートランジスタ

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 3

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 300 mV