STMicroelectronics STN2580 BJTs - バイポーラトランジスタ 高電圧 NPN パワートランジスタ 800V 1A

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

Emitter- Base Voltage VEBO: 9 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 60

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 1 V