STMicroelectronics STN83003 BJTs - バイポーラトランジスタ 高電圧高速スイッチングNPNパワートランジスタ

Width: 3.5 mm

Height: 1.8 mm

Length: 6.5 mm

Technology: Si

Unit Weight: 112 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

Emitter- Base Voltage VEBO: 12 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 400 V

Collector-Emitter Saturation Voltage: 500 mV