STMicroelectronics STT818B BJTs - バイポーラトランジスタ PNP 低電圧 高利得

Width: 1.75 mm

Height: 1.3 mm

Length: 3.05 mm

Technology: Si

Unit Weight: 6.500 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.2 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Continuous Collector Current: - 3 A

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 30 V

Collector-Emitter Saturation Voltage: 210 mV