Taiwan Semiconductor BC338-16 A1 BJTs - バイポーラトランジスタ 30V、0.8A、NPNバイポーラトランジスタ

Technology: Si

Unit Weight: 453.600 mg

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 625 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 30 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 25 V

Collector-Emitter Saturation Voltage: 700 mV