Taiwan Semiconductor TSA874CW RPG BJTs - バイポーラトランジスタ -500V、-0.15A、PNPバイポーラトランジスタ

Technology: Si

Unit Weight: 260 mg

Configuration: Single

Mounting Style: SMD/SMT

Moisture Sensitive: Yes

Transistor Polarity: PNP

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 300

Gain Bandwidth Product fT: 50 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 500 V

Continuous Collector Current: - 150 mA

Maximum DC Collector Current: 150 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 80

Collector- Emitter Voltage VCEO Max: 500 V

Collector-Emitter Saturation Voltage: 500 mV